Semiconductor device and methods of manufacturing semiconductor devices

ABSTRACT

In one example, a semiconductor device comprises an electronic component comprising a component face side, a component base side, a component lateral side connecting the component face side to the component base side, and a component port adjacent to the component face side, wherein the component port comprises a component port face. A clip structure comprises a first clip pad, a second clip pad, a first clip leg connecting the first clip pad to the second clip pad, and a first clip face. An encapsulant covers portions of the electronic component and the clip structure. The encapsulant comprises an encapsulant face, the first clip pad is coupled to the electronic component, and the component port face and the first clip face are exposed from the encapsulant face. Other examples and related methods are also disclosed herein.

CROSS-REFERENCE TO RELATED APPLICATIONS

Not applicable.

TECHNICAL FIELD

The present disclosure relates, in general, to electronic devices, andmore particularly, to semiconductor devices and methods formanufacturing semiconductor devices

BACKGROUND

Prior semiconductor packages and methods for forming semiconductorpackages are inadequate, for example resulting in excess cost, decreasedreliability, relatively low performance, or package sizes that are toolarge. Further limitations and disadvantages of conventional andtraditional approaches will become apparent to one of skill in the art,through comparison of such approaches with the present disclosure andreference to the drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a cross-sectional view of an example semiconductordevice.

FIGS. 2A, 2B, 2C, 2D, 2E, 2F and 2G show cross-sectional views of anexample method for manufacturing an example semiconductor device.

FIG. 3 illustrates a cross-sectional view of an example semiconductordevice.

FIGS. 4A, 4B, 4C, 4D, 4E, and 4F show cross-sectional views of anexample method for manufacturing an example semiconductor device.

FIG. 5 illustrates a cross-sectional view of an example semiconductordevice.

FIG. 6 illustrates a cross-sectional view of an example semiconductordevice.

The following discussion provides various examples of semiconductordevices and methods of manufacturing semiconductor devices. Suchexamples are non-limiting, and the scope of the appended claims shouldnot be limited to the particular examples disclosed. In the followingdiscussion, the terms “example” and “e.g.” are non-limiting.

The figures illustrate the general manner of construction, anddescriptions and details of well-known features and techniques may beomitted to avoid unnecessarily obscuring the present disclosure. Inaddition, elements in the drawing figures are not necessarily drawn toscale. For example, the dimensions of some of the elements in thefigures may be exaggerated relative to other elements to help improveunderstanding of the examples discussed in the present disclosure. Thesame reference numerals in different figures denote the same elements.

The term “or” means any one or more of the items in the list joined by“or”. As an example, “x or y” means any element of the three-element set{(x), (y), (x, y)}. As another example, “x, y, or z” means any elementof the seven-element set {(x), (y), (z), (x, y), (x, z), z), (x, y, z)}.

The terms “comprises,” “comprising,” “includes,” and/or “including,” are“open ended” terms and specify the presence of stated features, but donot preclude the presence or addition of one or more other features.

The terms “first,” “second,” etc. may be used herein to describe variouselements, and these elements should not be limited by these terms. Theseterms are only used to distinguish one element from another. Thus, forexample, a first element discussed in this disclosure could be termed asecond element without departing from the teachings of the presentdisclosure.

Unless specified otherwise, the term “coupled” may be used to describetwo elements directly contacting each other or describe two elementsindirectly connected by one or more other elements. For example, ifelement A is coupled to element B, then element A can be directlycontacting element B or indirectly connected to element B by anintervening element C. Similarly, the terms “over” or “on” may be usedto describe two elements directly contacting each other or describe twoelements indirectly connected by one or more other elements.

DESCRIPTION

The present description includes, among other features, an electronicdevice and associated methods that include a clip structure connected toan electronic component. The electronic component includes a componentport with a component face and the clip structure includes a clip face.An encapsulant covers the electronic component, the component port, andthe clip structure. The encapsulant includes an encapsulant face; andthe clip face and the component port face are exposed from theencapsulant face. In some examples, the component port comprises acomponent terminal. In other examples, the component port comprises acomponent terminal and a component interconnect. In some examples, theclip structure includes a first clip pad and a second clip padinterconnected to the first clip pad. In some examples, the first clippad is connected to the electronic component. In some example, the firstclip pad comprises the first clip face. In other examples, the secondclip pad comprises the first clip face. Among other things, the deviceand methods provide for electrical interconnection on one side of theelectronic device.

In an example, a semiconductor device comprises an electronic componentcomprising a component face side, a component base side, a componentlateral side connecting the component face side to the component baseside, and a component port adjacent to the component face side. A clipstructure is coupled to the electronic component, and an encapsulantcovers portions of the electronic component and the clip structure. Thecomponent port comprises a component port face, the encapsulantcomprises an encapsulant face, the clip structure comprises a first clipface, and the component port face and the first clip face are exposedfrom the encapsulant face.

In an example, a semiconductor device comprises a electronic componentcomprising a component face side, a component base side, a componentlateral side connecting the component face side to the component baseside, and a component port adjacent to the component face side, whereinthe component port comprises a component port face. A clip structurecomprises a first clip pad, a second clip pad, a first clip legconnecting the first clip pad to the second clip pad, and a first clipface. An encapsulant covers portions of the electronic component and theclip structure. The encapsulant comprises an encapsulant face, the firstclip pad is coupled to the electronic component, and the component portface and the first clip face are exposed from the encapsulant face.

In an example, a method for forming a semiconductor device comprisesproviding an electronic component comprising a component face side, acomponent base side, a component lateral side connecting the componentface side to the component base side, and a component port adjacent tothe component face side, wherein the component port comprises acomponent port face. The method includes providing a clip structurehaving a first clip face and coupling the clip structure to theelectronic component. The method includes providing an encapsulantcovering portions of the electronic component and the clip structure,where the encapsulant comprises an encapsulant face, and the componentport face and the first clip face are exposed from the encapsulant face.

Other examples are included in the present disclosure. Such examples maybe found in the figures, in the claims, and/or in the description of thepresent disclosure.

FIG. 1 illustrates a cross-sectional view of an example semiconductordevice 100. In the example shown in FIG. 1, semiconductor device 100 cancomprise plate 110, electronic component 120, clip structure 130,encapsulant 140, dielectric 150 and external interconnects 160.

Electronic component 120 can comprise component base side 120 a andcomponent face side 120 b. Electronic component 120 can comprisecomponent terminals 121 a,121 b,121 c, and component interconnects 122.In some examples, component terminals 121 a,121 b,121 c, together withrespective component interconnects 122, can be referred as componentports. In some examples, component interconnects 122 can be referred ascomponent ports.

Plate 110, clip structure 130, encapsulant 140, dielectric 150 andexternal interconnects 160 can comprise or be referred to assemiconductor package 101 and can provide protection for electroniccomponent 120 from external elements and/or environmental exposure.Semiconductor package 101 can provide electrical coupling between anexternal component and electronic component 120.

FIGS. 2A, 2B, 2C, 2D, 2E, 2F and 2G show cross-sectional views of anexample method for manufacturing an example semiconductor device 100.

FIG. 2A illustrates a cross-sectional view at an early stage ofmanufacture of semiconductor device 100. In the example shown in FIG.2A, plate 110 can be substantially planar and can comprise or bereferred to as a conductive plate or a heat dissipating plate. In someexamples, plate 110 can be made of a material such as copper material(copper or an alloy having copper and another element such as nickel(Ni), silicon (Si), phosphorous (P) or titanium (Ti)), an iron-nickelalloy, or a Copper/Stainless Steel/Copper clad metal). To prevent plate110 from being corroded, gold (Au), silver (Ag), tin (Sn), nickel (Ni)or palladium (Pd) can be partially or entirely plated on side of plate110. In some examples, the thickness of plate 110 can range from about 3μm (micrometer) to about 2000 μm, or the width of plate 110 can rangefrom about 0.5 mm (millimeter) to about 10 mm.

FIG. 2B illustrates a cross-sectional view at a later stage ofmanufacture of semiconductor device 100. In the example shown in FIG.2B, electronic component 120 comprising component interconnects 122 canbe attached to top side 110 b of plate 110.

In some examples, electronic component 120 can comprise or be referredto as a semiconductor die, a semiconductor chip, or a semiconductorpackage. In some examples, electronic component 120 can comprise a powerdevice or a transistor device, such as a Field-Effect-Transistor (FET)device. In some examples, electronic component 120 can comprise activeor passive electrical circuitry. In some examples, electronic component120 can comprise one or more transistors, a digital signal processor(DSP), a microprocessor, a network processor, a power managementprocessor, an audio processor, an RF circuit, a wireless basebandsystem-on-chip (SoC) processor, a sensor, an optical or light sensor, atransmitter, a wireless, optical, or light transmitter, or anapplication specific integrated circuit (ASIC). In some examples,electronic component 120 can comprise a silicon substrate or a glasssubstrate. In some examples, the thickness of electronic component 120can range from about 30 μm to about 780 μm, or the width of electroniccomponent 120 can range from about 0.5 mm to about 10 mm. Electroniccomponent 120 can have component base side 120 a and component face side120 b opposite each other.

Electronic component 120 can comprise component terminal 121 c atcomponent base side 120 a. In some examples, component terminal 121 ccan be configured for receiving or transmitting signals or power. Insome examples, component terminal 121 c can comprise or be referred toas a source terminal or a drain terminal of electronic component 120. Insome examples, component terminal 121 c can comprise a component base orsurface of electronic component 120 at component base side 120 a.

Electronic component 120 can comprise component terminals 121 a,121 bprovided on component face side 120 b. Component terminals 121 a,121 bcan comprise signal or power terminals of electronic component 120, andcan comprise or be referred to as component face terminals, pads,under-bump-metallizations (UBMs), or bumps. Component terminals 121a,121 b can comprise one or more layers of conductive material, such asaluminum, copper, or tin. In some examples, component terminal 121 b cancomprise or be referred to as a drain terminal or a source terminal ofelectronic component 120. In some examples, component terminal 121 a cancomprise or be referred to as a gate or control terminal of electroniccomponent 120. In some examples, the widths of component terminals 121can range from about 0.01 mm to about 1 mm.

Component interconnects 122 can be provided on or coupled with componentterminals 121. Component interconnects 122 can extend upwardly fromcomponent terminals 121. In some examples, the heights of componentinterconnects 122 can range from about 0.05 mm to about 2 mm. In someexamples, component interconnects 122 can be provided by electroplating,electroless plating, sputtering, physical vapor deposition (PVD),chemical vapor deposition (CVD), metalorganic CVD (MOCVD), atomic layerdeposition (ALD), low pressure CVD (LPCVD) or plasma-enhanced CVD(PECVD). In some examples, component interconnects 122 can comprisewirebonded wires extending substantially vertically. In some examples,component interconnects 122 can comprise one or more of copper, gold,silver, palladium, tungsten or nickel material. Component interconnects122 can comprise or be referred to as bumps, pillars, vertical wires,posts or conductive paths. In some examples, component interconnects 122can electrically and mechanically connect external interconnects 160 toelectronic component 120.

Component base side 120 a of electronic component 120 can be bonded totop side 110 b of plate 110 by interface material 111. In some examples,electronic component 120 can be picked up by pick-and-place equipmentand placed on interface material 111 positioned on plate 110. In someexamples, interface material 111 can be applied first to electroniccomponent 120 and, and then electronic component 120 can be coupled toplate 110 through interface material 111. In some examples electroniccomponent 120 can be electrically or thermally coupled to plate 110,through interface material 111, using a mass reflow process, a thermalcompression process or a laser assist bonding process.

In some examples, interface material 111 can be provided on top side 110b of plate 110, or on component base side 120 a, using a coatingprocess, such as spin coating, doctor blade coating, spray coating; aprinting process, such as screen printing, jet printing; or directattachment of a film or tape. Interface material 111 can comprise or bereferred to as an adhesive, a paste, a solder; an electrical conductor,or a heat conductor material. In some examples, Interface material 111can comprise copper, iron, nickel, gold, silver, palladium or tin.Interface material 111 can electrically or thermally connect componentbase side 120 a of electronic component 120 to plate 110.

FIG. 2C illustrates a cross-sectional view at a later stage ofmanufacture of semiconductor device 100. In the example shown in FIG.2C, plate 110 and component terminal 121 c at component face side 120 bof electronic component 120 can be connected through clip structure 130.

In some examples, clip structure 130 can comprise clip 130 a or clip 130b. Clip structure 130 a can comprise clip pad 131 a that is coupled tocomponent face side 120 b of electronic component 120, and clip leg 132a that is coupled to and extends between clip pad 131 a and top side 110b of plate 110. In some examples, clip leg 132 a can comprise or can becoupled to clip pad 133 a that is coupled to top side 110 b of plate110. In some examples, a surface of clip pad 131 a coupled to componentface side 120 b can be substantially parallel to component face side 120b. In some examples, a surface of clip pad 133 a coupled to plate 110can be substantially parallel to top side 110 b of plate 110. In someexamples, clip leg 132 a can extend diagonally from clip pad 133 atowards plate 110 or clip pad 133 a. In some examples, clip 130 b cancomprise respective clip pad 131 b, clip leg 132 b, or clip pad 133 b.

In some examples, clip structure 130 can be provided by bending oretching one or more conductive plates. In some examples, clip structure130 can comprise part of a leadframe. In some examples, clip structure130 can be made of a copper material (copper or an alloy having copperand another element such as Ni, Si, P, or T), an iron-nickel material,or a Cu/SUS/Cu clad metal. In some examples, the thickness of clipstructure 130 can range from about 0.05 mm to about 2 mm.

In some examples, interface material 111 can be applied on top side 110b of plate 110, and bond material 123 can be applied on component faceside 120 b of electronic component 120. Clips 130 a,130 b of clipstructure 130 can be positioned such that clip pad 131 a,131 b coupleswith bond material 123 to bond with component face side 120 b ofelectronic component 120, and such that clip leg 132 a,132 b or clip pad133 a,133 b couples with interface material 111 to bond with plate 110.In some examples, clip pad 131 a,131 b can be attached at a periphery oredge of component face side 120 b. In some examples, clip leg 132 a,132b can be coupled on top side 110 b of plate 110 adjacent a lateral sideof electronic component 120.

In some examples, bond material 123 can comprise or be referred to anelectrically insulating material. In some examples, bond material 123can comprise or be referred to as a heat-conductive material. In someexamples, bond material 123 can comprise or be referred to as anadhesive, a paste, or a solder. Clip structure 130 can be electrically,thermally or mechanically connected to plate 110 through interfacematerial 111. Clip structure 130 can be mechanically or thermallyconnected to component face side 120 b of electronic component 120through bond material 123. Clip structure 130 can be electricallyisolated from component face side 120 b of electronic component 120 insome implementations. For example, bond material 123 can comprise anelectrically insulating material between clip pad 131 a,131 b andcomponent face side 120 b of electronic component 120. As anotherexample, bond material 123 can comprise an electrically conductivematerial, but does not contact any exposed terminal of semiconductordevice 120 between clip pad 131 a,131 b and component face side 120 b ofelectronic component 120.

FIG. 2D illustrates a cross-sectional view at a later stage ofmanufacture of semiconductor device 100. In the example shown in FIG.2D, encapsulant 140 can cover plate 110, electronic component 120 andclip structure 130. In some examples, encapsulant 140 can contact topside 110 b of plate 110. In some examples, encapsulant 140 can contactcomponent face side 120 b or lateral sides of electronic component 120.In some examples, encapsulant 140 can contact top sides or lateral sidesof component interconnects 122. In some examples, encapsulant 140 cancontact top or lateral sides of clip structure 130. In some examples,encapsulant 140 can extend between clip structure 130 and lateral sidesof electronic component 120.

In some examples, encapsulant 140 can comprise or be referred to as anepoxy molding compound, an epoxy molding resin or a sealant. In someexamples, encapsulant 140 can comprise or be referred to as a moldingpart, a sealing part, an encapsulation part, a protection part, or apackage body. In some examples, encapsulant 140 can comprise, an organicresin, an inorganic filler, a curing agent, a catalyst, a couplingagent, a coloring agent, and a flame retardant. Encapsulant 140 can beprovided by a variety of processes. In some examples, encapsulant 140can be provided by, a compression molding process, a liquid phaseencapsulant molding process, a vacuum lamination process, a pasteprinting process, or a film assisted molding process. The thickness ofencapsulant 140 can range from approximately 0.08 mm to approximately 3mm. Encapsulant 140 can cover plate 110, electronic component 120 andclip structure 130 to protect plate 110, electronic component 120 andclip structure 130 from external elements and/or environmental exposure.

FIG. 2E illustrates a cross-sectional view at a later stage ofmanufacture of semiconductor device 100. In the example shown in FIG.2E, a portion of encapsulant 140 can be removed to expose face 122 z ofcomponent interconnects 122, and face 131 z of clip pads 131 a,131 b ofclip structure 130, from encapsulant 140. Encapsulant 140 can be removedby grinding or chemical etching. In some examples, side 140 z ofencapsulant 140 can be coplanar with face 122 z of componentinterconnects 122 and face 131 z of clip pad 131 a,131 b. In someexamples, the thickness of encapsulant 140 having the top portionremoved can range from about 0.08 mm to about 3 mm.

FIG. 2F illustrates a cross-sectional view at a later stage ofmanufacture of semiconductor device 100. In the example shown in FIG.2F, dielectric 150 can be provided to cover top side 140 z ofencapsulant 140, face 122 z of component interconnects 122 and face 131z of clip pad 131 a,131 b of clip structure 130.

Dielectric 150 can comprise or be referred to as a dielectric layer, apassivation layer, an insulation layer or a protection layer. In someexamples, dielectric 150 can comprise, an electrically insulatingmaterial, such as a polymer, polyimide (PI), benzocyclobutene (BCB),polybenzoxazole (PBC)), bismaleimide triazine (BT), a molding material,a phenolic resin, an epoxy, silicone, or an acrylate polymer. In someexamples, dielectric 150 can be provided by any of a variety ofprocesses. For example, dielectric 150 can be provided by spin coating,spray coating, printing, PVD, CVD, MOCVD, ALD, LPCVD or PECVD. Thethickness of dielectric 150 can range from about 2 μm to about 30 μm.

Apertures 151 and 152 exposing face 122 z of component interconnects 122and face 131 z of clip pad 131 a,131 b can be provided on dielectric150. In some examples, apertures 151 and 152 can be formed by patterninga mask on a top side of dielectric 150 and then exposed dielectric 150can be removed by etching to expose, face 122 z of componentinterconnects 122 and face 131 z of clip pad 131 a,131 b. Face 122 z ofcomponent interconnects 122 or face 131 z of clip pad 131 a,131 bexposed through apertures 151 and 152 can be circular, rectangular orpolygonal in some examples.

FIG. 2G illustrates a cross-sectional view at a later stage ofmanufacture of semiconductor device 100. In the example shown in FIG.2G, external interconnects 160 can be provided on face 122 z ofcomponent interconnects 122, or on face 131 z of clip pad 131 a,131 b.External interconnects 160 can be electrically connected to face 122 zof component interconnects 122, or to face 131 z of clip pad 131 a,131b. External interconnects 160 can be electrically connected to componentterminal 121 c at component base side 120 a of electronic component 120through clip structure 130 and plate 110, or can be electricallyconnected to component terminals 121 a,121 b of electronic component 120through component interconnects 122.

In some examples, external interconnects 160 can comprise tin (Sn),silver (Ag), lead (Pb), copper (Cu), Sn—Pb, Sn37-Pb, Sn95-Pb, Sn—Pb—Ag,Sn—Cu, Sn—Ag, Sn—Au, Sn—Bi, or Sn—Ag—Cu. For example, externalinterconnects 160 can be provided by a ball drop process, a screenprinting process or an electroplating process. For example, externalinterconnects 160 can be provided by applying a conductive materialincluding a solder to face 122 z of component interconnects 122 and face131 z of clip pad 131 through a ball drop process, followed byperforming a reflow process. External interconnects 160 can be referredto as conductive balls, such as solder balls, conductive pillars, suchas copper pillars, or conductive posts having solder caps on copperpillars. The sizes of external interconnects 160 can range from about 50mm to about 700 mm. Additionally, completed semiconductor device 100 canbe flipped, so external interconnects 160 are positioned on bottom sideof semiconductor device 100. In some examples, external interconnects160 can be referred to as external input/output terminals ofsemiconductor device 100.

FIG. 3 illustrates a cross-sectional view of an example semiconductordevice 200. In the example shown in FIG. 3, semiconductor device 200 cancomprise electronic component 220, clip structure 230, encapsulant 240,dielectric 250 and external interconnects 160.

Electronic component 220 can comprise component base side 220 a andcomponent face side 220 b. Electronic component 220 can includecomponent ports comprising component terminals 221 a,221 b,221 c.

Clip structure 230, encapsulant 240, dielectric 250 and externalinterconnects 160 can comprise or be referred to as semiconductorpackage 201 or package 201, and can provide protection for electroniccomponent 220 from external elements and/or environmental exposure.Semiconductor package 201 can provide electrical coupling between anexternal component and electronic component 220. Semiconductor device200 is an example of device where encapsulant 240 is interposed betweena component lateral side of electronic component 220, clip pad 233 a orclip pad 233 b.

FIGS. 4A, 4B, 4C, 4D, 4E, and 4F show cross-sectional views of anexample method for manufacturing an example semiconductor device 200.

FIG. 4A illustrates a cross-sectional view of semiconductor device 200at an early stage of manufacture. In the example shown in FIG. 4A,electronic component 220 can be attached on carrier 10.

Electronic component 220 can comprise component base side 220 a andcomponent face side 220 b opposite to component base side 220 a.Component base side 220 a can comprise component terminal 221 c, andcomponent face side 220 b can comprise component terminals 221 a,221 b.Electronic component 220 and its features or elements be similar toelectronic component 120 and its respective features or elements.Electronic component 220 can be positioned with component face side 220b and component terminals 221 bonded to carrier 10.

Carrier 10 can be a substantially planar plate. For example, carrier 10can comprise or be referred to as a board, a wafer, a panel, or a strip.In some examples, carrier 10 can comprise, steel, stainless steel,aluminum, copper, ceramic, silicon, or glass. The thickness of carrier10 can range from 100 mm to 780 mm, and the width of carrier 10 canrange from 200 mm to 300 mm. Carrier 10 can function for attachment ofelectronic component 220 and clip structure 230, and can simultaneouslyhandle formation of multiple semiconductor devices in an array format.

Carrier 10 can comprise adhesive 11, applied prior to attachment ofelectronic component 220. Adhesive 11 can comprise or be referred to asa temporary adhesive film or a temporary adhesive tape. In someexamples, adhesive 11 can comprise a thermally releasable tape (film) ora photo-releasable tape (film). In some examples, adhesiveness of andcan be weakened or removed by heat or light. In some examples, theadhesiveness of adhesive 11 can be weakened or removed by physicaland/or chemical external force. The thickness of adhesive 11 can rangefrom about 5 μm to about 100 μm.

FIG. 4B illustrates a cross-sectional view at a later stage ofmanufacture of semiconductor device 200. In the example shown in FIG.4C, clip structure 230 can be provided coupled between electroniccomponent 220 and carrier 10.

Clip structure 230 can be similar to clip structure 130 and itscorresponding features or elements described in the present disclosure.Clip structure 230 can comprise clip 230 a having clip pad 231 a coupledto component base side 220 a of electronic component 220, and havingclip leg 232 a coupled to and extended between clip pad 231 a andcarrier 10. In some examples, clip leg 232 a can comprise or can becoupled to clip pad 233 a that is coupled to carrier 10. In someexamples, a surface of clip pad 231 a coupled to component base side 220a can be substantially parallel to component base side 220 a. In someexamples, a surface of clip pad 233 a coupled to carrier 10 can besubstantially parallel to carrier 10. In some examples, clip leg 232 acan extend diagonally from clip pad 231 a towards carrier 10 or clip pad233 a. In some examples, clip structure 230 can comprise clip 230 b withrespective clip pad 231 b, clip leg 232 b, or clip pad 233 b.

In some examples, interface material 211 can be applied on componentbase side 220 a of electronic component 220. In some examples, interfacematerial 211 can be similar to, or can be similarly formed or applied,as interface material 111 previously described with respect to FIGS.1-2. Interface material can electrically or thermally couple clipstructure 230 to component terminal 221 c at component base side 220 aof electronic component 220. Clips 230 a,230 b of clip structure 230 canbe positioned such that clip pad 231 a,231 b couples to interfacematerial 211 to bond with component base side 220 a of electroniccomponent 220, and such that clip leg 232 a,232 b or clip pad 233 a,233b couples to adhesive 11 to bond with carrier 10. In some examples, clippad 231 a,231 b can be attached at a periphery or edge of component baseside 220 a. In some examples, clip leg 232 a,232 b can be coupled tocarrier 10 adjacent a lateral side of electronic component 220.

FIG. 4C illustrates a cross-sectional view at a later stage ofmanufacture of semiconductor device 200. In the example shown in FIG.4C, encapsulant 240 can cover electronic component 220 and clipstructure 230. In some examples, encapsulant 240 can contact componentbase side 220 a or lateral sides of electronic component 220. In someexamples, encapsulant 240 can contact top or lateral sides of clipstructure 230, or can be positioned between clip structure 230 andlateral sides of electronic component 220. Encapsulant 240 can besimilar to, or can be similarly formed or applied as, encapsulant 140.

FIG. 4D illustrates a cross-sectional view of semiconductor device 200at a later stage of manufacture. In the example shown in FIG. 4D,carrier 10 can be removed. Adhesive 11 can be released from electroniccomponent 220, clip structure 230 and encapsulant 240 in a state whereit remains bonded to carrier 10. In some examples, heat, light, achemical solution and/or physical external force can be applied toremove or reduce adhesiveness of adhesive 11. With carrier 10 removed,component face side 220 b of electronic component 220, face 221 z ofcomponent terminals 221 a,221 b of electronic component 220, face 233 zof clip pad 233 a,233 b of clip structure 230, or side 240 z ofencapsulant 240 can be exposed.

FIG. 4E illustrates a cross-sectional view at a later stage ofmanufacture of semiconductor device 200. In the example shown in FIG.4E, dielectric 250 can be provided to cover component face side 220 b ofelectronic component 220, face 233 z of clip pad 233 a,233 b of clipstructure 230, and side 240 z of encapsulant 240. Apertures 251,252through dielectric 250 can expose face 221 z of component terminals 221a,221 b, and can expose face 233 z of clip pad 233 a,233 b. Dielectric250 can be similar to, and can be similarly formed as, dielectric 150.

FIG. 4F illustrates a cross-sectional view at a later stage ofmanufacture of semiconductor device 200. In the example shown in FIG.4F, external interconnects 260 are provided on face 221 z of componentterminals 221 a,221 b, and on face 233 z of clip pad 233 a,233 b.External interconnects 260 can be electrically connected to componentbase side 220 a of electronic component 220 through clip structure 230.External interconnects 260 can be similar to, and can be similarlyformed as, external interconnects 160.

FIG. 5 illustrates a cross-sectional view of an example semiconductordevice 300. In the example shown in FIG. 5, semiconductor device 300 cancomprise plate 310, electronic component 220, clip structure 230,encapsulant 240, dielectric 250 and external interconnects 260.

Semiconductor device 300 can be similar to other semiconductor devicesdescribed in this disclosure in terms of structure or formation, such assemiconductor device 200 described in FIGS. 3-4. Semiconductor device300 comprises plate 310 coupled to clip structure 230 at face 231 z ofclip pad 231 a,231 b. In some examples, plate 310 can be similar toplate 110 described with respect to FIGS. 1-2. In some examples, priorto coupling of plate 310, a portion of encapsulant 240 can be removed toexpose face 231 z of clip pad 231 a,231 b, similar to as described withrespect to FIG. 2E. In some examples, plate 310 can be directly formedon or coupled with clip pad 231 a,231 b of clip structure 30 or withencapsulant 240. In some examples, plate 310 can couple with clip pad231 a,231 b of clip structure 30 through interface material 111.

FIG. 6 illustrates a cross-sectional view of an example semiconductordevice 400. In the example shown in FIG. 6, semiconductor device 400 cancomprise electronic component 220, clip structure 430, encapsulant 240,dielectric 250 and external interconnects 160.

Semiconductor device 400 can be similar to other semiconductor devicesdescribed in this disclosure in terms of structure or formation, such assemiconductor device 200 described in FIGS. 3-4, or semiconductor device300 described in FIG. 5

Clip structure 430 can be similar to clip structure 230 described inFIGS. 3-5 in terms of structure or formation, and comprises clip bridge430 z extending between clip legs 232 a, 232 b over component base side220 a. In some examples, clip bridge 430 can span an entire width ofelectronic component 220. In some examples, interface material 211 cancouple bridge 430 with component terminal 221 c at component base side220 a of electronic component 220. In some examples, interface material211 can cover a majority of the width or area of component base side 220a.

The present disclosure includes reference to certain examples, however,it will be understood by those skilled in the art that various changesmay be made and equivalents may be substituted without departing fromthe scope of the disclosure. In addition, modifications may be made tothe disclosed examples without departing from the scope of the presentdisclosure. Therefore, it is intended that the present disclosure not belimited to the examples disclosed, but that the disclosure will includeall examples falling within the scope of the appended claims.

What is claimed is:
 1. A semiconductor device, comprising: asemiconductor component comprising: a component face side; a componentbase side; a component lateral side connecting the component face sideto the component base side; a component port adjacent to the componentface side and comprising: a first component terminal on the componentface side; and a first component interconnect coupled to the firstcomponent terminal; and a second component terminal on the componentbase side; a clip structure coupled to the component face side with afirst interface material; and an encapsulant covering portions of thesemiconductor component and the clip structure; wherein: the firstcomponent interconnect comprises a component port face; the encapsulantcomprises a first encapsulant face and a second encapsulant faceopposite to the first encapsulant face; the clip structure comprises afirst clip face and a second clip face; and the component port face andthe first clip face are exposed from the first encapsulant face; and thesecond clip face is electrically coupled to the second componentterminal at the second encapsulant face.
 2. The semiconductor device ofclaim 1, wherein: the first interface material is electricallyinsulating; and the first encapsulant face, the first clip face, and thecomponent port face are substantially co-planar.
 3. The semiconductordevice of claim 1, wherein: the clip structure comprises: a first clippad having the first clip face; a second clip pad having the second clipface; and a first clip leg connecting the first clip pad and the secondclip pad together.
 4. The semiconductor device of claim 1 wherein: thesecond clip face is coupled to the second component terminal with aconductive plate that overlaps the second clip face and the secondcomponent terminal.
 5. The semiconductor device of claim 4, wherein: thesecond clip face and the second component terminal are coupled to theconductive plate with a second interface material; the second interfacematerial is electrically conductive; the second interface material isexposed from the second encapsulant face; and outer surfaces of thesecond interface material are coplanar with the second encapsulant face.6. The semiconductor device of claim 1, wherein: the clip structurecomprises: a first clip pad coupled to the semiconductor component andhaving the first clip face; a second clip pad having the second clipface; a first clip leg connecting the first clip pad and the second clippad together; a third clip pad coupled to the semiconductor component; afourth clip pad; and a second clip leg connecting the third clip pad andthe fourth clip pad together.
 7. The semiconductor device of claim 6,wherein: the first clip pad is coupled to the component face side at afirst peripheral edge of the semiconductor component; the third clip padis coupled to the component face side at a second peripheral edge of thesemiconductor component; and the encapsulant completely covers outerends of the second clip face and the fourth clip face.
 8. Thesemiconductor device of claim 1, further comprising: a dielectric layerover the first encapsulant face and having apertures, wherein portionsof the first clip face and the component port face are exposed withinthe apertures; and external interconnects coupled to the first clip faceand the component port face through the apertures.
 9. The device ofclaim 1, wherein: the second component terminal is a drain terminal. 10.A semiconductor device, comprising: a semiconductor componentcomprising: a component face side; a component base side; a componentlateral side connecting the component face side to the component baseside; a component port adjacent to the component face side, wherein thecomprises a component port face; and a first component terminal on thecomponent base side; a clip structure comprising: a first clip padhaving a first clip face; a second clip pad having a second clip face;and a first clip leg connecting the first clip pad to the second clippad; and an encapsulant covering portions of the semiconductor componentand the clip structure; wherein: the encapsulant comprises a firstencapsulant face and a second encapsulant face opposite to the firstencapsulant face; the first clip pad is coupled to the component faceside with a first interface material; the first interface material iselectrically insulating; and the component port face and the first clipface are exposed from the first encapsulant face.
 11. The semiconductordevice of claim 10, wherein: the component port comprises a secondcomponent terminal and a component interconnect; the componentinterconnect comprises the component port face; the component port faceand the first clip face are substantially co-planar; and the firstcomponent terminal is one of a drain terminal or a source terminal. 12.The semiconductor device of claim 10, wherein: the second clip face iselectrically connected to first component terminal at the secondencapsulant face.
 13. The semiconductor device of claim 10, wherein: thesecond clip pad has an outer end proximate to a side of the encapsulant;and the outer end is completely covered by the encapsulant.
 14. A methodof forming a semiconductor device, comprising: providing a semiconductorcomponent comprising: a component face side; a component base side; acomponent lateral side connecting the component face side to thecomponent base side; a component port adjacent to the component faceside and comprising a first component terminal on the component faceside; and a first component interconnect coupled to the first componentterminal, wherein the first component interconnect comprises a componentport face; and a second component terminal on the component base side;providing a clip structure having a first clip face and a second clipface; coupling the clip structure to the component face side with afirst interface material; providing an encapsulant covering portions ofthe semiconductor component and the clip structure; wherein: the firstinterface material is electrically insulating; the second clip face hasan outer end proximate to a side of the encapsulant; the encapsulantcomprises a first encapsulant face and a second encapsulant faceopposite to the first encapsulant face; and the component port face andthe first clip face are exposed from the first encapsulant face; andelectrically coupling the second clip face to the second componentterminal at the second encapsulant face.
 15. The method of claim 14,further comprising: providing a dielectric over the first encapsulantface; and providing apertures in the dielectric that expose portions ofthe first clip face and the component port face; and providing externalinterconnects coupled to the first clip face and the component port facethrough the apertures.
 16. The method of claim 12, wherein: the coveringincludes completely covering the outer end of the second clip face.